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  feb.1999 mitsubishi transistor modules QM30HC-2H induction heater use non-insulated type outline drawing & circuit diagram dimensions in mm application induction heater for cooking QM30HC-2H ? i c collector current .......................... 30a ? v cex collector-emitter voltage ......... 1600v ? h fe dc current gain............................... 75 ? non-insulated type 62 38 27 52 be 5.2 26 f 4.5 0.8 2 10 5 15 be c (case) label
feb.1999 conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute mounting screw m4 typical value absolute maximum ratings (tj=25 c, unless otherwise noted) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight ratings 1600 1600 10 30 30 310 5 300 C40~+150 C40~+125 0.98~1.47 10~15 50 unit v v v v a a w a a c c v nm kgcm g mitsubishi transistor modules QM30HC-2H induction heater use non-insulated type electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 75 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1600v, v eb =2v v cb =1600v, emitter open v eb =10v i c =30a, i b =2a Ci c =30a (diode forward voltage) i c =30a, v ce =5v v cc =100v, i c =30a, i b1 =2a, i b2 =C5a transistor part diode part conductive grease applied typ. max. 1.0 1.0 400 2.0 2.5 1.5 4.0 5.0 3.0 0.4 0.8 0.25
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM30HC-2H induction heater use non-insulated type ? 10 ? 10 0 10 1 10 1 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.4 1.8 2.2 2.6 3.0 3.4 v ce =5.0v t j =25? 100 80 60 40 20 0 01 23 4 5 t j =25? i b =2a i b =1a i b =0.5a i b =4a i b =6a 3 10 7 5 4 3 2 2 10 7 5 4 3 2 1 10 0 10 23457 1 10 23457 2 10 v ce =2.0v v ce =5.0v t j =25? t j =125? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 t j =25? t j =125? i b =2a v be(sat) v ce(sat) 0 1 2 3 4 5 7 5 3 2 7 5 3 2 7 5 3 24 4 4 t j =25? t j =125? i c =30a i c =10a i c =50a 1 10 7 5 4 3 2 0 10 7 5 4 3 0 10 23457 1 10 23457 2 10 3 2 t j =25? t j =125? t s t f t on v cc =100v i b1 =2a i b2 =?a
feb.1999 1 10 0 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 0 10 ? 10 0 10 1 10 2 10 3 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 1 10 7 5 4 3 2 0 10 7 5 4 3 45 7 0 10 23457 1 10 3 2 23 3 t j =25? t j =125? t s t f v cc =100v i c =30a i b1 =2a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 t c =25? t w =100? 500? 1ms dc 7 5 3 2 7 5 3 2 7 5 3 2 0.1 0.2 0.3 0.4 0.5 0 2 7 5 3 2 4 4 4 4 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) switching time t s , t f ( m s) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM30HC-2H induction heater use non-insulated type z th (jCc) ( c/ w)
feb.1999 0 10 ? 10 ? 10 ? 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 7 5 3 2 7 5 3 2 7 5 3 2 0.2 0.4 0.6 0.8 1.0 0 2 7 5 3 2 4 4 4 4 3 surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) conduction time (cycles at 60hz) time (s) mitsubishi transistor modules QM30HC-2H induction heater use non-insulated type z th (jCc) ( c/ w)


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